集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 40mA |
截止频率fT
Transtion Frequency(fT) | 5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 25~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon Planar RF Transistor Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency |
| 描述与应用 | NPN硅平面RF晶体管 应用 RF放大器高达GHz范围内，专为宽波段天线放大器。 特点 高功率增益 低噪声系数 高转换频率 |