集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −25V |
集电极连续输出电流IC
Collector Current(IC) | -4A |
截止频率fT
Transtion Frequency(fT) | 135MHz |
直流电流增益hFE
DC Current Gain(hFE) | 250~800 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -350mV/-0.35V |
耗散功率Pc
PoWer Dissipation | 2.5W |
| Description & Applications | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES 4 Amp Continuous Current 10 Amp Pulse Current Low Saturation voltage High Gain |
| 描述与应用 | PNP硅平面中功率高增益晶体管 特点 4安培连续电流 10安培脉冲电流 低饱和电压 高增益 |