最大源漏极电压Vds
Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | 1.25A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 11.5mΩ@ VGS = 4.5V,ID = 10A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 1V |
耗散功率Pd
Power Dissipation | 2.5W |
| Description & Applications | N-Channel Power MOSFET Feature Low Rds(ON) Applications • DC-DC converters for mobile CPUS • Battery-powered portable equipment • High power density switch-mode supplies • point-of-use power supplies |
| 描述与应用 | N沟道功率MOSFET 特点 低RDS（ON） 应用 •移动CPU的DC-DC转换器 •电池供电的便携式设备 •高功率密度开关模式电源 •使用点电源 |