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  • Model：AAT8107IAS-T1
  • Manufacturer：HUABAN
  • Date Code：07NOPB
  • Standard Package：2500
  • Min Order：10
  • Mark/silk print/code/type：GA7
  • Package：SOIC8/SOP8

最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		-6.5A
源漏极导通电阻Rds
Drain-Source On-State Resistance		0.046Ω@ VGS =-2.5V, ID=-5.0A
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.6V
耗散功率Pd
Power Dissipation		2.5W
Description & ApplicationsP-Channel Power MOSFET General Description The AAT8107 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8107 is designed for use as a load switch in battery powered applications and protection in battery packs. Applications • Battery Packs • Battery-powered portable equipment
描述与应用P沟道功率MOSFET 概述 AAT8107低阈值为20V，双P沟道MOSFET AnalogicTech的TrenchDMOS产品系列的成员。使用一个超高密度的专有TrenchDMOS技术AAT8107是专为使用作为负载开关 在电池组中电池供电的应用和保护。 应用 •电池组 •电池供电的便携式设备

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