集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 160~460 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planar type For general amplifi cation Features Features * High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio hFFEE * mini typ package, allowing downsizing of the equipment and Smini typ package, allowing downsizing of the equipment and aautomatic utomatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 对于一般的扩增阳离子 特点特点 *高正向电流传输比h高正向电流传输比h高正向电流传输比hFFEE *迷你典型包装，允许缩减的设备和SMINI的典型包装允许设备和A自动utomatic的瘦身 通过磁带插入包装 |