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Parameters:

  • Model:BSS192P
  • Manufacturer:HUABAN
  • Date Code:08+ROHS 08NOPB
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:KC
  • Package:SOT-89/SC-62

最大源漏极电压Vds
Drain-Source Voltage
-240V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-0.15A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
10Ω @-150mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8--2.8V
耗散功率Pd
Power Dissipation
1W
Description & ApplicationsSIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V
描述与应用SIPMOS®小信号晶体管 •P沟道 •增强模式 •逻辑电平 •VGS(TH)=-0.8-2.0 V

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BSS192P
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