最大源漏极电压Vds
Drain-Source Voltage | 50V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 7V |
最大漏极电流Id
Drain Current | 100mA/0.1A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 1200mΩ@ VGS = 4V, ID = 10mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.9~1.5V |
耗散功率Pd
Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon N-channel MOSFET For switching ■ Features • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • Reduction of the mounting area and assembly cost by one half |
| 描述与应用 | 硅N沟道MOSFET 对于开关 ■特点 •允许2.5 V驱动器 •集成了内置栅极保护二极管 •减少安装面积和装配成本的一半 |