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  • Model:UP0487800L
  • Manufacturer:HUABAN
  • Date Code:05NOPB 05NOPB
  • Standard Package:8000
  • Min Order:100
  • Mark/silk print/code/type:7Y
  • Package:SOT-563

最大源漏极电压Vds
Drain-Source Voltage
50V
最大栅源极电压Vgs(±)
Gate-Source Voltage
7V
最大漏极电流Id
Drain Current
100mA/0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance
1200mΩ@ VGS = 4V, ID = 10mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.9~1.5V
耗散功率Pd
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon N-channel MOSFET For switching ■ Features • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • Reduction of the mounting area and assembly cost by one half
描述与应用硅N沟道MOSFET 对于开关 ■特点 •允许2.5 V驱动器 •集成了内置栅极保护二极管 •减少安装面积和装配成本的一半

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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UP0487800L
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