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Parameters:

  • Model:BAR63V-06W-GS08
  • Manufacturer:HUABAN
  • Date Code:08NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:CW
  • Package:SOT-323/SC-70

反向电压VR
Reverse Voltage
50V
平均正向整流电流IF
Forward Current(If)
100mA/0.1A
二极管电容值CT
Diode capacitance
0.23pF
最大耗散功率Pd
Power dissipation
Description & ApplicationsDescription Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diode are wireless, mobile and TV-systems. Features • Low forward resistance • Very small reverse capacitance • Lead (Pb)-free component Applications For frequency up to 3 GHz RF-signal tuning Mobile, wireless and TV-Applications Mechanical Data
描述与应用描述 特点是一个非常低的反向电容 PIN二极管BAR63V-06W是专为射频信号 调整。由于正向偏置电流的函数 的正向电阻(射频)可以调整到小于 1Ω而低反向电容提供了一个高 隔离。这个PIN二极管的典型应用 无线,移动和电视系统。 特点  •低正向电阻  •非常小的反向电容  •铅(Pb)免费组件 应用 对于频率高达3 GHz RF信号调谐 移动,无线和电视应用 机械数据

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BAR63V-06W-GS08
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