集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -300V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −300V |
集电极连续输出电流IC
Collector Current(IC) | −500mA/-0.5A |
截止频率fT
Transtion Frequency(fT) | 50MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 300mW/0.3W |
| Description & Applications | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Types Available (MMBTA42) • Ideal for Medium Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | PNP小信号表面贴装晶体管 特点 •外延平面模具建设 •互补NPN类型可用（MMBTA42） •非常适于中等功率放大和开关 •铅，卤素和无锑，符合RoHS标准 •符合AEC-Q101标准的高可靠性 |