集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC
Collector Current(IC) | 2A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 180mV/0.18V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | Silicon NPN epitaxial planer type darlington high current switching amplification Features * large current capacity and wide ASO * Low collector to emitter saturation voltage VCE(sat) * fast switch speed * adoption of FBET，MBIT processes |
| 描述与应用 | NPN硅外延平面型达林顿 高电流开关放大 特点 *大电流容量，广ASO *低集电极到发射极饱和电压VCE（SAT） *开关速度快 *采用的FBET，MBIT进程 |