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  • Model:BB303MCW
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:CW
  • Package:SOT-143

最大源漏极电压Vds Drain-Source Voltage 7V
最大栅源极电压Vgs(±) Gate-Source Voltage -0V~7V
最大漏极电流Id Drain Current 25MA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance  
开启电压Vgs(th) Gate-Source Threshold Voltage  
耗散功率Pd Power Dissipation 150MW/0.15W
Description & Applications * Build in Biasing Circuit MOS FET IC. * VHF/UHF RF Amplifier. * Build in Biasing Circuit; To reduce using parts cost & PC board space. * High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz). * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
描述与应用 * 内置偏置电路MOS FET的IC。 * VHF / UHF RF放大器。 * 在偏置电路生成,降低零部件的成本与PC板空间。 * 较强的正向转移导纳(| YFS|=42毫秒(典型值)f= 1千赫)。 * 耐ESD;内置ESD吸收二极管。承受高达250V在C = 200pF,Rs = 0条件。

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BB303MCW
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