集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 60mA |
截止频率fT
Transtion Frequency(fT) | 6Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 30~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 333mW/0.333W |
| Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost. |
| 描述与应用 | RF线NPN硅 高频三极管 专为低噪声，宽动态范围前端放大器 低噪声VCO。可在一个表面贴装塑料包装。这 摩托罗拉的小信号的塑料晶体管提供优异的质量和性能 成本低。 |