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Parameters:

  • Model:MMBT3906
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:H2A
  • Package:SOT-23

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
−200mA/-0.2A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
225mW/0.225W
Description & ApplicationsPNP epitaxial planar transistor PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
描述与应用PNP外延平面晶体管 PNP通用放大器 这个装置是专为通用放大器和开关应用在集电极电流为10μA至100 mA的。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MMBT3906
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