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Parameters:

  • Model:KTX401U-Y
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:CD
  • Package:SOT-353/USV

BJT  TYPE  NPN
BJT V(BR)CBO Collector-Base Voltage(VCBO)  60V
BJT Collector-Emitter Voltage(VCEO)  50V
BJT  Collector Current(IC)  150MA
BJT Transtion Frequency(fT)  80MHZ
BJT  DC Current Gain(hFE)  120~400
BJT VCE(sat) Collector-Emitter Saturation Voltage  0.25V
DIODE TYPE  SWITCHING DIODES
DIODE VR Reverse Voltage  85V
DIODE Io Rectified Current  0.3A
DIODE  Forward Voltage(Vf)  1.2V
Pc Power Dissipation  
Description & Applications  EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
*Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
*Simplify circuit design. 
*Reduce a quantity of parts and manufacturing process. 
 

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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KTX401U-Y
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