集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -35V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −25V |
集电极连续输出电流IC
Collector Current(IC) | -3A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −600mV/-0.6V |
耗散功率Pc
PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. |
| 描述与应用 | 低饱和PNP晶体管 这些设备的设计与高电流增益和低饱和电压与集电极电流高达3A的连续。 |