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  • Model:2SK321-R
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:1FR
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
15v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-15v
漏极电流(Vgs=0V)IDSS
Drain Current
20~32ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-3v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•Silicon N-Channel Junction FET
描述与应用•硅N沟道结型场效应管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK321-R
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