集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 80mA |
截止频率fT
Transtion Frequency(fT) | 6Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 110~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 300mW/0.3W |
| Description & Applications | Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | NPN硅外延平面型 对于UHF频段低噪声放大 ■特点 •低噪声系数NF •高转换频率fT •迷你型包装，使小型的设备 通过自动插入磁带包装和杂志 填料 |