| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -80mA |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 耗散功率Pc Power Dissipation | 0.125W/125mW |
| Description & Applications | Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •Optimum for high-density mounting and downsizing of the equipment •Contribute to low power consumption |
| 描述与应用 | 特点 •内置电阻晶体管 •PNP硅外延刨床晶体管 •最适用于高密度设备的安装和精简 •有助于低功耗 |