| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | 200MHz/150MHz |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features • Epitaxial planar NPN/PNP silicon transistor • Both SRC1202 chip and SRA2202 chip in SOT-363 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Description • Dual chip digital transistor |
| 描述与应用 | 特点 •外延平面NPN/ PNP硅晶体管 •双方SRC1202芯片和SRA2202芯片SOT-363封装 •简化电路设计 •减少了部件数量和制造工艺 描述 •双芯片数字晶体管 |