| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V/-40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V/-20V |
| 集电极连续输出电流IC Collector Current(IC) | 400mA/-400mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 820~2500 |
| 截止频率fT Transtion Frequency(fT) | 35MHz |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •Composite Transistor With Resistor For Muting Application Silicon NPN Epitaxial Type •Built-in bias resistor ( R1=10 KΩ/Ohm) •Mini package for easy mounting Applications •muting circuit、switching circuit |
| 描述与应用 | 特点 •复合静音应用硅NPN外延型晶体管，电阻 •内置偏置电阻（R1= 10KΩ/Ohm） •易于安装的小型封装 应用 •静音电路，开关电路 |