Please log in first
Home
Cart0

×

Parameters:

  • Model:RT3N11M
  • Manufacturer:HUABAN
  • Date Code:08NOPB 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:N11
  • Package:SOT-363/SC-88/SC70-6

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)50
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation150mW/0.15W
Description & ApplicationsFeatures • Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type • Silicon epitaxial type • Each transistor elements are independent. • Mini package for easy mounting Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •复合开关应用硅外延型晶体管,电阻 •硅外延型 •每个晶体管的元素是独立的。 •易于安装的小型封装 应用 •开关,逆变电路,接口电路和驱动器电路应用

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
RT3N11M
*Title:
Message:
*Code: