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Parameters:

  • Model:2SC5295J-R
  • Manufacturer:HUABAN
  • Date Code:03+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:3SR
  • Package:SOT-523/SC-75

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
65mA
截止频率fT
Transtion Frequency(fT)
8.5Ghz
直流电流增益hFE
DC Current Gain(hFE)
100~170
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon NPN epitaxial planar type 2 GHz band low-noise amplification ■ Features • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
描述与应用NPN硅外延平面型  2 GHz频段低噪声放大 ■特点 •高转换频率fT •低集电极输出电容(通用基础,输入开路)COB •SS-迷你型包装,使瘦身的设备和 通过自动插入磁带包装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SC5295J-R
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