集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 65mA |
截止频率fT
Transtion Frequency(fT) | 8.5Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 100~170 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type 2 GHz band low-noise amplification ■ Features • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 2 GHz频段低噪声放大 ■特点 •高转换频率fT •低集电极输出电容（通用基础，输入开路）COB •SS-迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |