| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 4.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Power MOSFET 4 Amps, 30 Volts N−Channel TSOP−6 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Pb−Free Packages are Available • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • IDSS Specified at Elevated Temperature |
| 描述与应用 | 功率MOSFET 4安培，30伏特 N沟道TSOP-6 这些微型表面贴装MOSFET的低RDS（ON）保证 最小的功率损耗，节约能源，使这些设备的理想选择 用于在小的电源管理电路。典型的应用是DC-DC转换器，电源管理在便携式和 电池供电的产品，如电脑，打印机，PCMCIA卡，手机和无绳电话。 •无铅包可用 •低的RDS（on） 提供更高的效率和延长电池寿命 •微型SOT-23表面贴装封装节省电路板空间 •IDSS指定高温 |