集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | −200mA/-0.2A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -400mV/-0.4V |
耗散功率Pc
PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with SBT3904 |
| 描述与应用 | PNP硅晶体管 简述 •通用应用 •开关应用 特点 •低集电极饱和电压 •集电极输出电容 •互补配对SBT3904 |