最大源漏极电压Vds
Drain-Source Voltage | 15V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -7V |
漏极电流(Vgs=0V)IDSS
Drain Current | 0.35A |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | |
耗散功率Pd
Power Dissipation | 2.5W |
| Description & Applications | N-CHANNEL GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. 0.4W L, S-BAND POWER GaAs MES FET High Output Power : PO (1 dB) = +26 dBm High Linear Gain : 14 dB High Power Added Efficiency |
| 描述与应用 | N沟道砷化镓 MES 场效应管 说明 NE650R479A是一个0.4 W砷化镓 MES 场效应管设计的中等电量变送器应用的移动通信手机和基站系统。它能够提供0.4瓦的输出功率（CW），高线性增益，高效率，出色的失真，适合作为驱动放大器NE6500379A等 NEC严格的质量控制程序，保证可靠性和性能均匀性。 0.4W L，S波段功率砷化镓 MES FET 高输出功率：PO（1dB）=+26 dBm 高线性增益：14dB 高功率附加效率 |