最大源漏极电压Vds
Drain-Source Voltage | 30V/-30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | 1.8A/-1.2A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 410mΩ@ VGS = 0.5V,ID =4A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 1.2~2.6V |
耗散功率Pd
Power Dissipation | 800mW/0.8W |
| Description & Applications | N-Channel and P-Channel Silicon MOSFETS General-Purpose Switching Device Applications Features • The CPH6614 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting. • Excellent ON-resistance characteristic. • Best suited for load switches. • 4V drive. |
| 描述与应用 | N沟道和P沟道硅MOSFET 通用开关设备应用 特点 •CPH6614采用了N沟道MOSFET和一个P沟道MOSFET，具有低导通电阻， 超高速开关，从而实现高密度安装。 •优秀的导通电阻特性。 •最适合用于负载开关。 •4V驱动器。 |