集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 300~600 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
High DC Current Gain: hFE = 200 TYP.
(VCE = 6.0 V, IC = 1.0 mA)
High Voltage: VCEO = 50 V |
| 描述与应用 | NPN硅外延晶体管, 音频通用放大器 .
特点: 高DC电流增益 高电压：VCEO= 50 V |