最大源漏极电压Vds
Drain-Source Voltage | 20v |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -20v |
漏极电流(Vgs=0V)IDSS
Drain Current | 0.15~0.24ma |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -0.37~-1v |
耗散功率Pd
Power Dissipation | 100mW/0.1W |
| Description & Applications | •JUNCTION FIELD EFFECT TRANSISTOR •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone |
| 描述与应用 | •结型场效应晶体管 •N沟道硅结型场效应晶体管 •低噪音： -108.5 dB（典型值）。 （VDD= 2.0 V，C= 5 pF的，RL=2.2kΩ上） •特别适用于音频和电话 |