| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V/-45V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV |
| 耗散功率Pc Power Dissipation | 200mW |
| Description & Applications | Features • NPN/PNP general purpose transistor • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Switch mode power supply complementary MOSFET driver • Complementary driver for audio amplifiers. |
| 描述与应用 | 特点 •NPN/ PNP通用晶体管 •300 mW的总功耗 •非常小的1.6毫米×1.2毫米的超薄封装 •优秀的共面性，由于直引线 •替换两个SC-75/SC-89包装相同的PCB面积上的晶体管 •减少所需PCB面积 •减少取放成本。 应用 •通用开关和放大 •开关模式电源互补MOSFET驱动器 •互补驱动器，音频放大器。 |