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  • Model:NTD80N02T4
  • Manufacturer:HUABAN
  • Date Code:02+ 02+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:80N02
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage24V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current80A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.058Ω/Ohm @80A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation76W
Description & ApplicationsPower MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Power Supplies • Converters • Power Motor Controls • Bridge Circuits
描述与应用功率MOSFET 3.0安培,60伏 N沟道SOT-223 专为低电压,高速开关应用 电源,转换器和功率电机控制桥电路。 功率MOSFET 24 V,80 A,N沟道DPAK 专为低电压,高速开关应用 电源,转换器和功率电机控制桥电路。 •电源供应器 •转换器 •功率电机控制 •桥电路

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NTD80N02T4
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