最大源漏极电压Vds
Drain-Source Voltage | 60V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | 3A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 133mΩ@ VGS = 4V, ID = 0.5A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 1.2~2.6V |
耗散功率Pd
Power Dissipation | 1.3W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-Speed Switching Applications Features • Ultrahigh-speed switching. • 4V drive. • Composite type, facilitating high-density mounting |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 超高速开关应用 特点 •超高速开关。 •4V驱动器。 •复合型，促进高密度安装。 |