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  • Model:2SK3230
  • Manufacturer:HUABAN
  • Date Code:06NOPB 05+07+ROHS2200
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:J4
  • Package:SOT-523/SC-75/USM

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.09~0.18ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.1~-1v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S
描述与应用•N沟道硅结型场效应晶体管 流脑的阻抗变换器 特点 •小型封装 •高正向转移导纳 1000μs典型值。 (IDSS= 100μA) 1600μSTYP。 (IDSS= 200μA) •包括二极管和高阻力在G ​​- S

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3230
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