| Description & Applications |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
• LOW NOISE:
Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:
Q1: |S21E|
2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
Q2: |S21E|
2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE856, Q2: NE681)
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