| 最大源漏极电压Vds Drain-Source Voltage | 15V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 5V |
| 最大漏极电流Id Drain Current | 1.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function. • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER: +35.5 dBm TYP • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz • HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz • SINGLE SUPPLY: 2.8 to 6.0 V • CLASS AB OPERATION • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX |
| 描述与应用 | NEC的3.2 V，W，L/ S频段中功率硅LD-MOSFET •低成本塑料表面装载包装 •高输出功率：+35.5 dBm（典型值） •高线性增益：16 dB（典型值）@915 MHz •高功率附加效率：65％TYP@ VDS= 3.2 V，F =915兆赫 •单电源：2.8到6.0 V •AB类操作 •表面贴装包装：5.7x5.7x1.1 mm最大 |