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Parameters:

  • Model:NE5520379A
  • Manufacturer:HUABAN
  • Date Code:06NOPB 06NOPB
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:A3
  • Package:SOT86/79A

最大源漏极电压Vds Drain-Source Voltage15V
最大栅源极电压Vgs(±) Gate-Source Voltage5V
最大漏极电流Id Drain Current1.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-2.0V
耗散功率Pd Power Dissipation20W
Description & ApplicationsNEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function. • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER: +35.5 dBm TYP • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz • HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz • SINGLE SUPPLY: 2.8 to 6.0 V • CLASS AB OPERATION • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
描述与应用NEC的3.2 V,W,L/ S频段中功率硅LD-MOSFET •低成本塑料表面装载包装 •高输出功率:+35.5 dBm(典型值) •高线性增益:16 dB(典型值)@915 MHz •高功率附加效率:65%TYP@ VDS= 3.2 V,F =915兆赫 •单电源:2.8到6.0 V •AB类操作 •表面贴装包装:5.7x5.7x1.1 mm最大

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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NE5520379A
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