| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~600 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features •SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR •Epitaxial Planar Die Construction •Built-In Biasing Resistors •Lead Free/RoHS Compliant (Note 3) •Surface Mount Package Suited for Automated Assembly |
| 描述与应用 | 特点 •小信号互补预偏置双晶体管 •外延平面电路小片建设 •内置偏置电阻器？ •无铅/ RoHS规定（注3） •表面贴装封装，适合于自动化装配 |