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  • Model:PMBFJ111
  • Manufacturer:HUABAN
  • Date Code:09+ROHS 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:41W/P11/41W
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
40v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-40v
漏极电流(Vgs=0V)IDSS
Drain Current
20ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-10~-3v
耗散功率Pd
Power Dissipation
300mW/0.3W
Description & Applications•N-channel junction FETs •High-speed switching •Interchangeability of drain and source connections •Low RDSon at zero gate voltage (< 30  for PMBFJ111). •Analog switches •Commutators •Multiplexers • Thin and thick film hybrids.
描述与应用•N沟道结场效应晶体管 •高速开关 •漏极和源极连接的互换性 •在零电压(<30为PMBFJ111),低导通电阻。 •模拟开关 •交换机 •多路复用器 •薄和厚薄膜混合动力汽车。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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PMBFJ111
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