集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC Collector Current(IC) | -50mA |
截止频率fT Transtion Frequency(fT) | 40MHz |
直流电流增益hFE DC Current Gain(hFE) | 250~800 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc PoWer Dissipation | 225mW/0.225W |
Description & Applications | Low Noise Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
描述与应用 | 低噪声晶体管PNP硅 特点 •这些器件是无铅,无卤/无BFR,并符合RoHS标准 |