最大源漏极电压Vds
Drain-Source Voltage | 10V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | 6V |
漏极电流(Vgs=0V)IDSS
Drain Current | 10mA-80mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -3V |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | GaAs N-Channel MES FET .Feature; Low noise figure .High gain .Low input Capacitance .High AGC-range .Large input signal behaviour .Very low cross modulation. |
| 描述与应用 | 砷化镓N沟道MES场效应管. 特点: 低噪声系数, 高增益, 低输入电容, 高AGC范围, 大输入信号, 极低的交叉调制. |