最大源漏极电压Vds
Drain-Source Voltage | 8V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 6~15V/6~15V |
最大漏极电流Id
Drain Current | 25mA |
源漏极导通电阻Rds
Drain-Source On-State Resistance | |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.7/0.6 |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) • Two AGC amplifiers in one single package • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction |
| 描述与应用 | 双N沟道MOSFET的四极管 •两个UHF和VHF调谐器，例如增益控制输入级（NTSC，PAL） •两个AGC放大器在一个单一封装 •集成的栅极保护二极管 •高AGC范围，低噪声系数，高增益 •改进的交叉调制增益降低 |