集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 6Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 300mW/0.3W |
| Description & Applications | NPN 5 GHz wideband transistor FEATURES High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers,mixers and oscillators with signal frequencies up to 1 GHz |
| 描述与应用 | 5 GHz的宽带晶体管NPN 特点 高功率增益 黄金金属确保卓越的可靠性 SOT323封装（S-迷你）。 应用 它是专为使用的RF放大器，混频器和振荡器的信号频率高达1 GHz |