Home
Cart0
Inventory:10 Min Order:10
Parameters
Related model

×

Parameters:

  • Model:IRFR214
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:
  • Min Order:10
  • Mark/silk print/code/type:FR214
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage400V
最大栅源极电压Vgs(±) Gate-Source Voltage30V
最大漏极电流Id Drain Current1.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3.4Ω/Ohm @850mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2.0-4.0V
耗散功率Pd Power Dissipation2.5W
Description & ApplicationsDESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. • 1.7A, 400V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 7.7 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
描述与应用说明 Vishay的第三代功率MOSFET提供 设计师与快速切换的最佳组合, 坚固耐用的设备设计,低导通电阻和成本效益。 该DPAK是专为表面安装使用蒸汽相,红外线,或波峰焊技术。直 导致通孔版本(IRFU,赐福系列)安装应用程序。功耗水平,直至1.5 W 典型的表面贴装应用中是可能的。 •低栅极电荷(典型7.7 nC) •低Crss(典型6.0 pF) •快速开关 •100%雪崩测试 •改进的dv / dt能力

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
IRFR214
*Title:
Message:
*Code: