集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 350V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 350V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 40Mhz~200Mhz |
直流电流增益hFE
DC Current Gain(hFE) | 15~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV~500mV |
耗散功率Pc
Power Dissipation | 225mW/0.225W |
| Description & Applications | High Voltage Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. |
| 描述与应用 | 高电压晶体管NPN硅 产品符合RoHS要求的材料。 |