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Parameters:

  • Model:BSS119
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:SH
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3.4Ω/Ohm @1.7A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3-2.3V
耗散功率Pd Power Dissipation360mW/0.36W
Description & ApplicationsSIPMOS Small-Signal-Transistor • N-Channel • Enhancement mode • Logic Level • dv/dt rated
描述与应用SIPMOS小信号晶体管 •N沟道 •增强模式 •逻辑电平 •dv /dt的额定

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BSS119
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