集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 215MHz |
直流电流增益hFE
DC Current Gain(hFE) | 450 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 160mV/0.16V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | Super323 SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat) |
| 描述与应用 | Super323SOT323 NPN硅功率 （开关）晶体管 *500mW的功耗 * CONT IC1A *2A峰值脉冲电流 |