Please log in first
Home
Cart0

×

Parameters:

  • Model:EMD3
  • Manufacturer:HUABAN
  • Date Code:07+8Knopb 05+NOPB51K
  • Standard Package:8000
  • Min Order:100
  • Mark/silk print/code/type:D3
  • Package:SOT-563/EMT6

Collector-Base Voltage(VCBO) Q1/Q2 -50V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2 -50V/50V
Collector Current(IC) Q1/Q2 -50mA/50mA
Q1 Input Resistance(R1) 10KΩ/Ohm
Q1Base-Emitter Resistance(R2) 10KΩ/Ohm
Q1(R1/R2) Q1 Resistance Ratio 1
Q2 Input Resistance(R1) 10KΩ/Ohm
Q2 Base-Emitter Resistance(R2) 10KΩ/Ohm
Q2(R1/R2) Q2 Resistance Ratio 1
 DC Current Gain(hFE)  
 Transtion Frequency(fT) 250MHz
 Power Dissipation 150mW/0.15W
Description & Applications Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. •Mounting possible with EMT3 or UMT3 or SMT3automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half.
描述与应用 特点 •双共基极 - 集电极偏置电阻晶体管 •无论是DTA114E芯片和DTC114E芯片在EMT或UMT或SMT封装。 •安装EMT3或UMT3或SMT3automatic的的安装机。 •晶体管元素是独立的,消除干扰。 •安装成本和面积可减少一半

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
EMD3
*Title:
Message:
*Code: