集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 16V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 8V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 9Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 90~180 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 100mW/0.1W |
| Description & Applications | Features •NPN Epitaxial planar silicon transistor •low NOISE •High GAIN •high CUTOFF FREQUENCY •VERY Small-SIZED Package |
| 描述与应用 | 特点 •NPN外延平面硅晶体管 •低噪音 •高增益 •高截止频率 •非常小型封装 |