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Parameters:

  • Model:BFP183T
  • Manufacturer:HUABAN
  • Date Code:06NOPB 06NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:83P
  • Package:SOT-143

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
65mA
截止频率fT
Transtion Frequency(fT)
8Ghz
直流电流增益hFE
DC Current Gain(hFE)
50·150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsNPN Silicon Planar RF Transistor Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features Low power applications Low noise figure High transition frequency fT = 8 GHz
描述与应用NPN硅平面RF晶体管 应用 对于低噪声和高增益宽带放大器 集电极电流从2 mA到30 mA。 特点 低功耗应用 低噪声系数 过渡频率fT=8 GHz

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BFP183T
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