最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 8V |
最大漏极电流Id
Drain Current | -3A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 160mΩ@ VGS = -1.8V,ID = -1.5A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.3~-1V |
耗散功率Pd
Power Dissipation | 1.5W |
| Description & Applications | Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compliant -AON2801L is Halogen Free |
| 描述与应用 | 双P沟道增强型场效应晶体管 概述 AON2801/ L，采用先进的沟槽技术，提供出色的RDS（ON），低栅极电荷和操作与栅极电压可低至1.8V。这个装置是适合用于作为负载开关或PWM应用。 AON2801和AON2801L是电动相同。 符合RoHS标准 AON2801L是无卤 |