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Parameters:

  • Model:BCR185W
  • Manufacturer:HUABAN
  • Date Code:05nopb 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:WN
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.21
直流电流增益hFE DC Current Gain(hFE)70
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.25W/250mW
Description & ApplicationsFeature • PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1= 10kΩ , R2= 47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
描述与应用特点 •PNP硅数字晶体管 •开关电路,逆变器,接口电路,驱动电路 •内置偏置电阻(R1=10KΩ,R2=47KΩ) •对于6-PIN封装:2(电流)的内部具有良好的匹配隔离晶体管在一个封装中

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BCR185W
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