集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
60V |
集电极连续输出电流IC
Collector Current(IC) |
125mA/0.125A |
截止频率fT
Transtion Frequency(fT) |
200MHz |
直流电流增益hFE
DC Current Gain(hFE) |
180~390 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
300mV/0.3V |
耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURES ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ●Low collecter to emitter saturation voltage VCE(sat)=0.3V max (@IC=30mA,IB=1.5mA) APPLICATION For hybrid IC , small type machine low frequency voltage amplify application |
| 描述与应用 |
低频放大应用 硅NPN外延型 说明 2SC5814，2SC5815，2SC5816，2SC5817是一个超级迷你包 NPN硅外延型晶体管。它是专为低频 电压放大应用。 特点 ●促进小型化和高密度安装 ●优良的线性的直流正向电流增益 ●捕集器发射极饱和电压低 VCE（饱和）=0.3V最大（@ IC=30毫安，IB=1.5毫安） 应用 对于混合IC，小型机低频电压放大 应用 |